A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology has significantly enhanced the data storage capacity of ferroelectric memory devices.
The team successfully controlled the voltage across each layer by adjusting the capacitance of the ferroelectric layers, which involved fine-tuning factors such as the thickness and area ratio of the metal-to-metal and metal-to-channel ferroelectric layers. This efficient use of applied voltage to switch ferroelectric material improved the device's performance and reduced energy consumption.
Professor Jang-Sik Lee of POSTECH commented,"We have laid the technological foundation for overcoming the limitations of existing memory devices and provided a new research direction for hafnia-based ferroelectric memory." He added,"Through follow-up research, we aim to develop low-power, high-speed, and high-density memory devices, contributing to solving power issues in data centers and artificial intelligence applications.
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