Scientists have developed a new technique using ultrafast terahertz pulses to control atomic motion in two-dimensional semiconductors, promising advancements in high-speed computing and electronic device development.
By leveraging intense and broad-band ultrafast terahertz pulses, scientists from Yokohama National University and their colleagues at the California Institute of Technology have demonstrated atomic excitation in a two-dimensional semiconductor material, advancing the development of electronic devices.Two-dimensional materials, or sheet-like nanomaterials, are promising platforms for future semiconductor applications due to their unique electronic properties.
Terahertz radiation refers to electromagnetic waves with frequencies in the terahertz range, between microwave and infrared frequencies. The research team prepared ultrafast broadband terahertz pulses to induce coherent phonon dynamics in thin films of a TMD called WSe. A precise and sensitive setup was arranged for detecting optical anisotropy, in other words, how light behaves when it passes through the material.
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