Researchers at the Tokyo Institute of Technology have made significant advancements in memory technology using multiferroic materials, specifically BFCO nanodots. These materials enable more energy-efficient data writing using electric fields and non-destructive reading through magnetic fields. Credit: SciTechDaily.com
Traditional memory devices are volatile and the current non-volatile ones rely on either ferromagnetic or ferroelectric materials for data storage. In ferromagnetic devices, data is written or stored by aligning magnetic moments, while in ferroelectric devices, data storage relies on the alignment of electric dipoles.
BFCO 60-nm nanodots, with single domain structures, hold promise for high-density and low-power nonvolatile magnetic memory devices.
“Such a single-domain structure of ferroelectricity and ferromagnetism would be an ideal platform for investigating BFCO as an electric-field writing magnetic read-out memory device, and multi-domain structures offer a playground for fundamental research,” remarks Shigematsu.
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